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Extraordinary Magnetoresistance
Extraordinary magnetoresistance (EMR) is a geometrical magnetoresistance Magnetoresistance is the tendency of a material (often ferromagnetic) to change the value of its electrical resistance in an externally-applied magnetic field. There are a variety of effects that can be called magnetoresistance. Some occur in bulk ... effect discovered in 2000, where the change in electrical resistance upon the application of a large magnetic field can be greater than 1,000,000% at room temperature (orders of magnitude greater than other magnetoresistance effects such as GMR and CMR). The effect occurs in semiconductor-metal hybrid systems when a transverse magnetic field is applied. Without a magnetic field the system is in a low-resistance state with most of the current flow directed through the metallic region. Upon the application of a large magnetic field the system switches to a state of much higher electrical resistance, due to the Hall angle approaching 90°, with the current flow ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Diagram Of A Circular EMR System
A diagram is a symbolic representation of information using visualization techniques. Diagrams have been used since prehistoric times on walls of caves, but became more prevalent during the Enlightenment. Sometimes, the technique uses a three-dimensional visualization which is then projected onto a two-dimensional surface. The word '' graph'' is sometimes used as a synonym for diagram. Overview The term "diagram" in its commonly used sense can have a general or specific meaning: * ''visual information device'' : Like the term "illustration", "diagram" is used as a collective term standing for the whole class of technical genres, including graphs, technical drawings and tables. * ''specific kind of visual display'' : This is the genre that shows qualitative data with shapes that are connected by lines, arrows, or other visual links. In science the term is used in both ways. For example, Anderson (1997) stated more generally: "diagrams are pictorial, yet abstract, representati ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Magnetoresistance
Magnetoresistance is the tendency of a material (often ferromagnetic) to change the value of its electrical resistance in an externally-applied magnetic field. There are a variety of effects that can be called magnetoresistance. Some occur in bulk non-magnetic metals and semiconductors, such as geometrical magnetoresistance, Shubnikov–de Haas oscillations, or the common positive magnetoresistance in metals. Other effects occur in magnetic metals, such as negative magnetoresistance in ferromagnets or anisotropic magnetoresistance (AMR). Finally, in multicomponent or multilayer systems (e.g. magnetic tunnel junctions), giant magnetoresistance (GMR), tunnel magnetoresistance (TMR), colossal magnetoresistance (CMR), and extraordinary magnetoresistance (EMR) can be observed. The first magnetoresistive effect was discovered in 1856 by William Thomson, better known as Lord Kelvin, but he was unable to lower the electrical resistance of anything by more than 5%. Today, systems includi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Giant Magnetoresistance
Giant magnetoresistance (GMR) is a quantum mechanical magnetoresistance effect observed in multilayers composed of alternating ferromagnetic and non-magnetic conductive layers. The 2007 Nobel Prize in Physics was awarded to Albert Fert and Peter Grünberg for the discovery of GMR. The effect is observed as a significant change in the electrical resistance depending on whether the magnetization of adjacent ferromagnetic layers are in a parallel or an antiparallel alignment. The overall resistance is relatively low for parallel alignment and relatively high for antiparallel alignment. The magnetization direction can be controlled, for example, by applying an external magnetic field. The effect is based on the dependence of electron scattering on spin orientation. The main application of GMR is in magnetic field sensors, which are used to read data in hard disk drives, biosensors, microelectromechanical systems (MEMS) and other devices. GMR multilayer structures are also used in m ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Colossal Magnetoresistance
Colossal magnetoresistance (CMR) is a property of some materials, mostly manganese-based perovskite oxides, that enables them to dramatically change their electrical resistance in the presence of a magnetic field. The magnetoresistance of conventional materials enables changes in resistance of up to 5%, but materials featuring CMR may demonstrate resistance changes by orders of magnitude. This technology may find uses in disk read-and-write heads, allowing for increases in hard disk drive data density. However, so far it has not led to practical applications because it requires low temperatures and bulky equipment. History Initially discovered in mixed-valence perovskite manganites in the 1950s by G. H. Jonker and J. H. van Santen, a first theoretical description in terms of the double-exchange mechanism was given early on. In this model, the spin orientation of adjacent Mn moments is associated with kinetic exchange of eg-electrons. Consequently, alignment o ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Hall Effect
The Hall effect is the production of a voltage difference (the Hall voltage) across an electrical conductor that is transverse to an electric current in the conductor and to an applied magnetic field perpendicular to the current. It was discovered by Edwin Hall in 1879. A Hall effect can also occur across a void or hole in a semiconductor or metal plate, when current is injected via contacts that lie on the boundary or edge of the void or hole, and the charge flows outside the void or hole, in the metal or semiconductor. This Hall effect becomes observable in a perpendicular applied magnetic field across voltage contacts that lie on the boundary of the void on either side of a line connecting the current contacts. It exhibits apparent sign reversal in comparison to the standard "ordinary Hall effect" in the simply connected specimen, and depends only on the current injected from within the void. Superposition may also be realized in the Hall effect: first imagine the standard ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Magnetoresistance
Magnetoresistance is the tendency of a material (often ferromagnetic) to change the value of its electrical resistance in an externally-applied magnetic field. There are a variety of effects that can be called magnetoresistance. Some occur in bulk non-magnetic metals and semiconductors, such as geometrical magnetoresistance, Shubnikov–de Haas oscillations, or the common positive magnetoresistance in metals. Other effects occur in magnetic metals, such as negative magnetoresistance in ferromagnets or anisotropic magnetoresistance (AMR). Finally, in multicomponent or multilayer systems (e.g. magnetic tunnel junctions), giant magnetoresistance (GMR), tunnel magnetoresistance (TMR), colossal magnetoresistance (CMR), and extraordinary magnetoresistance (EMR) can be observed. The first magnetoresistive effect was discovered in 1856 by William Thomson, better known as Lord Kelvin, but he was unable to lower the electrical resistance of anything by more than 5%. Today, systems includi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Spintronics
Spintronics (a portmanteau meaning spin transport electronics), also known as spin electronics, is the study of the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, in solid-state devices. The field of spintronics concerns spin-charge coupling in metallic systems; the analogous effects in insulators fall into the field of multiferroics. Spintronics fundamentally differs from traditional electronics in that, in addition to charge state, electron spins are exploited as a further degree of freedom, with implications in the efficiency of data storage and transfer. Spintronic systems are most often realised in dilute magnetic semiconductors (DMS) and Heusler alloys and are of particular interest in the field of quantum computing and neuromorphic computing. History Spintronics emerged from discoveries in the 1980s concerning spin-dependent electron transport phenomena in solid-state devices. This includes the observa ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
