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Deal–Grove Model
The Deal–Grove model mathematically describes the growth of an oxide layer on the surface of a material. In particular, it is used to predict and interpret thermal oxidation of silicon in semiconductor device fabrication. The model was first published in 1965 by Bruce Deal and Andrew Grove of Fairchild Semiconductor, building on Mohamed M. Atalla's work on silicon surface passivation by thermal oxidation at Bell Labs in the late 1950s. This served as a step in the development of CMOS devices and the fabrication of integrated circuits. Physical assumptions The model assumes that the oxidation reaction occurs at the interface between the oxide layer and the substrate material, rather than between the oxide and the ambient gas. Thus, it considers three phenomena that the oxidizing species undergoes, in this order: # It diffuses from the bulk of the ambient gas to the surface. # It diffuses through the existing oxide layer to the oxide-substrate interface. # It reacts with the ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Oxide
An oxide () is a chemical compound that contains at least one oxygen atom and one other element in its chemical formula. "Oxide" itself is the dianion of oxygen, an O2– (molecular) ion. with oxygen in the oxidation state of −2. Most of the Earth's crust consists of oxides. Even materials considered pure elements often develop an oxide coating. For example, aluminium foil develops a thin skin of Al2O3 (called a passivation layer) that protects the foil from further corrosion.Greenwood, N. N.; & Earnshaw, A. (1997). Chemistry of the Elements (2nd Edn.), Oxford:Butterworth-Heinemann. . Stoichiometry (the measurable relationship between reactants and chemical equations of a equation or reaction) Oxides are extraordinarily diverse in terms of stoichiometries and in terms of the structures of each stoichiometry. Most elements form oxides of more than one stoichiometry. A well known example is carbon monoxide and carbon dioxide.Greenwood, N. N.; & Earnshaw, A. (1997). Chemistry ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Rate Equation
In chemistry, the rate law or rate equation for a reaction is an equation that links the initial or forward reaction rate with the concentrations or pressures of the reactants and constant parameters (normally rate coefficients and partial reaction orders). For many reactions, the initial rate is given by a power law such as :v_0\; =\; k mathrmx mathrmy where and express the concentration of the species and usually in moles per liter (molarity, ). The exponents and are the partial ''orders of reaction'' for and and the ''overall'' reaction order is the sum of the exponents. These are often positive integers, but they may also be zero, fractional, or negative. The constant is the reaction rate constant or ''rate coefficient'' of the reaction. Its value may depend on conditions such as temperature, ionic strength, surface area of an adsorbent, or light irradiation. If the reaction goes to completion, the rate equation for the reaction rate v\; =\; k cex cey applies throug ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Semiconductor Device Fabrication
Semiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuit (IC) chips such as modern computer processors, microcontrollers, and memory chips such as NAND flash and DRAM that are present in everyday electrical and electronics, electronic devices. It is a multiple-step sequence of Photolithography, photolithographic and chemical processing steps (such as surface passivation, thermal oxidation, planar process, planar diffusion and p–n junction isolation, junction isolation) during which electronic circuits are gradually created on a wafer (electronics), wafer made of pure semiconducting material. Silicon is almost always used, but various compound semiconductors are used for specialized applications. The entire manufacturing process takes time, from start to packaged chips ready for shipment, at least six to eight weeks (tape-out only, not including the circuit design) and is performed in highly specialized semiconduct ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Dopant
A dopant, also called a doping agent, is a trace of impurity element that is introduced into a chemical material to alter its original electrical or optical properties. The amount of dopant necessary to cause changes is typically very low. When doped into crystalline substances, the dopant's atoms get incorporated into its crystal lattice. The crystalline materials are frequently either crystals of a semiconductor such as silicon and germanium for use in solid-state electronics, or transparent crystals for use in the production of various laser types; however, in some cases of the latter, noncrystalline substances such as glass can also be doped with impurities. In solid-state electronics using the proper types and amounts of dopants in semiconductors is what produces the p-type semiconductors and n-type semiconductors that are essential for making transistors and diodes. Transparent crystals Lasing media The procedure of doping tiny amounts of the metals chromium (Cr), ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Silicon Nanowire
Silicon nanowires, also referred to as SiNWs, are a type of semiconductor nanowire most often formed from a silicon precursor by etching of a solid or through catalyzed growth from a vapor or liquid phase. Such nanowires have promising applications in lithium ion batteries, thermoelectrics and sensors. Initial synthesis of SiNWs is often accompanied by thermal oxidation steps to yield structures of accurately tailored size and morphology. SiNWs have unique properties that are not seen in bulk (three-dimensional) silicon materials. These properties arise from an unusual quasi one-dimensional electronic structure and are the subject of research across numerous disciplines and applications. The reason that SiNWs are considered one of the most important one-dimensional materials is they could have a function as building blocks for nanoscale electronics assembled without the need for complex and costly fabrication facilities. SiNWs are frequently studied towards applications including pho ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electronvolt
In physics, an electronvolt (symbol eV, also written electron-volt and electron volt) is the measure of an amount of kinetic energy In physics, the kinetic energy of an object is the energy that it possesses due to its motion. It is defined as the work needed to accelerate a body of a given mass from rest to its stated velocity. Having gained this energy during its acc ... gained by a single electron accelerating from rest through an Voltage, electric potential difference of one volt in vacuum. When used as a Units of energy, unit of energy, the numerical value of 1 eV in joules (symbol J) is equivalent to the numerical value of the Electric charge, charge of an electron in coulombs (symbol C). Under the 2019 redefinition of the SI base units, this sets 1 eV equal to the exact value Historically, the electronvolt was devised as a standard unit of measure through its usefulness in Particle accelerator#Electrostatic particle accelerators, electrostatic particle accel ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Miller Indices
Miller indices form a notation system in crystallography for lattice planes in crystal (Bravais) lattices. In particular, a family of lattice planes of a given (direct) Bravais lattice is determined by three integers ''h'', ''k'', and ''ℓ'', the ''Miller indices''. They are written (hkℓ), and denote the family of (parallel) lattice planes (of the given Bravais lattice) orthogonal to \mathbf_ = h\mathbf + k\mathbf + \ell\mathbf, where \mathbf are the basis or primitive translation vectors of the reciprocal lattice for the given Bravais lattice. (Note that the plane is not always orthogonal to the linear combination of direct or original lattice vectors h\mathbf + k\mathbf + \ell\mathbf because the direct lattice vectors need not be mutually orthogonal.) This is based on the fact that a reciprocal lattice vector \mathbf (the vector indicating a reciprocal lattice point from the reciprocal lattice origin) is the wavevector of a plane wave in the Fourier series of a spatia ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Pressure
Pressure (symbol: ''p'' or ''P'') is the force applied perpendicular to the surface of an object per unit area over which that force is distributed. Gauge pressure (also spelled ''gage'' pressure)The preferred spelling varies by country and even by industry. Further, both spellings are often used ''within'' a particular industry or country. Industries in British English-speaking countries typically use the "gauge" spelling. is the pressure relative to the ambient pressure. Various units are used to express pressure. Some of these derive from a unit of force divided by a unit of area; the SI unit of pressure, the pascal (Pa), for example, is one newton per square metre (N/m2); similarly, the pound-force per square inch (psi) is the traditional unit of pressure in the imperial and U.S. customary systems. Pressure may also be expressed in terms of standard atmospheric pressure; the atmosphere (atm) is equal to this pressure, and the torr is defined as of this. Manometric u ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Atmosphere (unit)
The standard atmosphere (symbol: atm) is a unit of pressure defined as Pa. It is sometimes used as a ''reference pressure'' or ''standard pressure''. It is approximately equal to Earth's average atmospheric pressure at sea level. History The standard atmosphere was originally defined as the pressure exerted by 760 mm of mercury at and standard gravity (''g''n = ). It was used as a reference condition for physical and chemical properties, and was implicit in the definition of the Celsius temperature scale, which defined as the boiling point of water at this pressure. In 1954, the 10th General Conference on Weights and Measures (CGPM) adopted ''standard atmosphere'' for general use and affirmed its definition of being precisely equal to dynes per square centimetre (). This defined both temperature and pressure independent of the properties of particular substance. In addition, the CGPM noted that there had been some misapprehension that it "led some physicists to believe ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Doping (semiconductor)
In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. Small numbers of dopant atoms can change the ability of a semiconductor to conduct electricity. When on the order of one dopant atom is added per 100 million atoms, the doping is said to be ''low'' or ''light''. When many more dopant atoms are added, on the order of one per ten thousand atoms, the doping is referred to as ''high'' or ''heavy''. This is often shown as ''n+'' for n-type doping or ''p+'' for p-type doping. (''See the article on semiconductors for a more detailed description of the doping mechanism.'') A semiconductor doped to such high levels that it acts more like a conductor than a semiconductor is referred to as a degenerate semiconductor. A semiconductor can be considered i-type semiconductor if it has ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Crystal
A crystal or crystalline solid is a solid material whose constituents (such as atoms, molecules, or ions) are arranged in a highly ordered microscopic structure, forming a crystal lattice that extends in all directions. In addition, macroscopic single crystals are usually identifiable by their geometrical shape, consisting of flat faces with specific, characteristic orientations. The scientific study of crystals and crystal formation is known as crystallography. The process of crystal formation via mechanisms of crystal growth is called crystallization or solidification. The word ''crystal'' derives from the Ancient Greek word (), meaning both "ice" and "rock crystal", from (), "icy cold, frost". Examples of large crystals include snowflakes, diamonds, and table salt. Most inorganic solids are not crystals but polycrystals, i.e. many microscopic crystals fused together into a single solid. Polycrystals include most metals, rocks, ceramics, and ice. A third category of ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Boltzmann Constant
The Boltzmann constant ( or ) is the proportionality factor that relates the average relative kinetic energy of particles in a gas with the thermodynamic temperature of the gas. It occurs in the definitions of the kelvin and the gas constant, and in Planck's law of black-body radiation and Boltzmann's entropy formula, and is used in calculating thermal noise in resistors. The Boltzmann constant has dimensions of energy divided by temperature, the same as entropy. It is named after the Austrian scientist Ludwig Boltzmann. As part of the 2019 redefinition of SI base units, the Boltzmann constant is one of the seven " defining constants" that have been given exact definitions. They are used in various combinations to define the seven SI base units. The Boltzmann constant is defined to be exactly . Roles of the Boltzmann constant Macroscopically, the ideal gas law states that, for an ideal gas, the product of pressure and volume is proportional to the product of amount of ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
