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Cut-off (electronics)
In electronics, cut-off is a state of negligible conduction that is a property of several types of electronic components when a control parameter (that usually is a well-defined voltage or electric current, but could also be an incident light intensity or a magnetic field), is lowered or increased past a value (the conduction threshold). The transition from normal conduction to cut-off can be more or less sharp, depending on the type of device considered, and also the speed of this transition varies considerably. Cutoff values Diodes * Copper oxide diode: Usually between germanium and silicon diodes (0.2-0.5V) * Diac: Depends on configuration. * Germanium diode:apx 0.3 V; varying with temperature. * Schottky diode:0.10–0.45, varying with temperature. * Selenium diode:Depends on age and current. Usually higher than silicon diodes. * Silicon diode: cutoff occurs when Vf falls below apx 0.7 V. The exact voltage varies with temperature. * Thermionic diode: cutoff voltage depen ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electrical Conduction
Electrical resistivity (also called specific electrical resistance or volume resistivity) is a fundamental property of a material that measures how strongly it resists electric current. A low resistivity indicates a material that readily allows electric current. Resistivity is commonly represented by the Greek letter (rho). The SI unit of electrical resistivity is the ohm-meter (Ω⋅m). For example, if a solid cube of material has sheet contacts on two opposite faces, and the resistance between these contacts is , then the resistivity of the material is . Electrical conductivity or specific conductance is the reciprocal of electrical resistivity. It represents a material's ability to conduct electric current. It is commonly signified by the Greek letter ( sigma), but (kappa) (especially in electrical engineering) and (gamma) are sometimes used. The SI unit of electrical conductivity is siemens per metre (S/m). Resistivity and conductivity are intensi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MOSFET
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET. Another synonym is IGFET for insulated-gate field-effect transistor. The basic principle of the field-effect transistor was first patented by Julius Edgar Lilienfeld in 1925.Lilienfeld, Julius Edgar (1926-10-08) "Method and apparatus for controlling electric currents" upright=1.6, Two power MOSFETs in V_in_the_''off''_state,_and_can_conduct_a_continuous_current_of_30 surface-mount_packages._Operating_as_switches,_each_of_these_components_can_su ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
