Charge Carrier Density
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Charge Carrier Density
Charge carrier density, also known as carrier concentration, denotes the number of charge carriers in per volume. In SI units, it is measured in m−3. As with any density, in principle it can depend on position. However, usually carrier concentration is given as a single number, and represents the average carrier density over the whole material. Charge carrier densities involve equations concerning the electrical conductivity and related phenomena like the thermal conductivity. Calculation The carrier density is usually obtained theoretically by integrating the density of states over the energy range of charge carriers in the material (e.g. integrating over the conduction band for electrons, integrating over the valence band for holes). If the total number of charge carriers is known, the carrier density can be found by simply dividing by the volume. To show this mathematically, charge carrier density is a particle density, so integrating it over a volume V gives the number ...
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Charge Carriers
In physics, a charge carrier is a particle or quasiparticle that is free to move, carrying an electric charge, especially the particles that carry electric charges in electrical conductors. Examples are electrons, ions and holes. The term is used most commonly in solid state physics. In a conducting medium, an electric field can exert force on these free particles, causing a net motion of the particles through the medium; this is what constitutes an electric current. In conducting media, particles serve to carry charge: *In many metals, the charge carriers are electrons. One or two of the valence electrons from each atom are able to move about freely within the crystal structure of the metal. The free electrons are referred to as conduction electrons, and the cloud of free electrons is called a Fermi gas. Many metals have electron and hole bands. In some, the majority carriers are holes. *In electrolytes, such as salt water, the charge carriers are ions, which are atoms or molecul ...
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Reversible Reaction
A reversible reaction is a reaction in which the conversion of reactants to products and the conversion of products to reactants occur simultaneously. : \mathit aA + \mathit bB \mathit cC + \mathit dD A and B can react to form C and D or, in the reverse reaction, C and D can react to form A and B. This is distinct from a reversible process in thermodynamics. Weak acids and bases undergo reversible reactions. For example, carbonic acid: : H2CO3 (l) + H2O(l) ⇌ HCO3−(aq) + H3O+(aq). The concentrations of reactants and products in an equilibrium mixture are determined by the analytical concentrations of the reagents (A and B or C and D) and the equilibrium constant, ''K''. The magnitude of the equilibrium constant depends on the Gibbs free energy change for the reaction. So, when the free energy change is large (more than about 30 kJ mol−1), the equilibrium constant is large (log K > 3) and the concentrations of the reactants at equilibrium are very small. Such a reac ...
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Hall Effect
The Hall effect is the production of a voltage difference (the Hall voltage) across an electrical conductor that is transverse to an electric current in the conductor and to an applied magnetic field perpendicular to the current. It was discovered by Edwin Hall in 1879. A Hall effect can also occur across a void or hole in a semiconductor or metal plate, when current is injected via contacts that lie on the boundary or edge of the void or hole, and the charge flows outside the void or hole, in the metal or semiconductor. This Hall effect becomes observable in a perpendicular applied magnetic field across voltage contacts that lie on the boundary of the void on either side of a line connecting the current contacts. It exhibits apparent sign reversal in comparison to the standard "ordinary Hall effect" in the simply connected specimen, and depends only on the current injected from within the void. Superposition may also be realized in the Hall effect: first imagine the standard ...
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Atomic Mass
The atomic mass (''m''a or ''m'') is the mass of an atom. Although the SI unit of mass is the kilogram (symbol: kg), atomic mass is often expressed in the non-SI unit dalton (symbol: Da) – equivalently, unified atomic mass unit (u). 1 Da is defined as of the mass of a free carbon-12 atom at rest in its ground state. The protons and neutrons of the nucleus account for nearly all of the total mass of atoms, with the electrons and nuclear binding energy making minor contributions. Thus, the numeric value of the atomic mass when expressed in daltons has nearly the same value as the mass number. Conversion between mass in kilograms and mass in daltons can be done using the atomic mass constant m_= = 1\ \rm . The formula used for conversion is: :1\ = m_ = 1.660\ 539\ 066\ 60(50)\times 10^\ \mathrm , where M_ is the molar mass constant, N_ is the Avogadro constant, and M(^\mathrm) is the experimentally determined molar mass of carbon-12. The relative isotopic mass (see ...
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Valence Electron
In chemistry and physics, a valence electron is an electron in the outer shell associated with an atom, and that can participate in the formation of a chemical bond if the outer shell is not closed. In a single covalent bond, a shared pair forms with both atoms in the bond each contributing one valence electron. The presence of valence electrons can determine the element's chemical properties, such as its valence—whether it may bond with other elements and, if so, how readily and with how many. In this way, a given element's reactivity is highly dependent upon its electronic configuration. For a main-group element, a valence electron can exist only in the outermost electron shell; for a transition metal, a valence electron can also be in an inner shell. An atom with a closed shell of valence electrons (corresponding to a noble gas configuration) tends to be chemically inert. Atoms with one or two valence electrons more than a closed shell are highly reactive due to the rel ...
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Avogadro Constant
The Avogadro constant, commonly denoted or , is the proportionality factor that relates the number of constituent particles (usually molecules, atoms or ions) in a sample with the amount of substance in that sample. It is an SI defining constant with an exact value of . It is named after the Italian scientist Amedeo Avogadro by Stanislao Cannizzaro, who explained this number four years after Avogadro's death while at the Karlsruhe Congress in 1860. The numeric value of the Avogadro constant expressed in reciprocal moles, a dimensionless number, is called the Avogadro number. In older literature, the Avogadro number is denoted or , which is the number of particles that are contained in one mole, exactly . The Avogadro number is the approximate number of nucleons (protons or neutrons) in one gram of ordinary matter. The value of the Avogadro constant was chosen so that the mass of one mole of a chemical compound, in grams, is approximately the number of nucleons in one cons ...
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Drude Model
The Drude model of electrical conduction was proposed in 1900 by Paul Drude to explain the transport properties of electrons in materials (especially metals). Basically, Ohm's law was well established and stated that the current ''J'' and voltage ''V'' driving the current are related to the resistance ''R'' of the material. The inverse of the resistance is known as the conductance. When we consider a metal of unit length and unit cross sectional area, the conductance is known as the conductivity, which is the inverse of resistivity. The Drude model attempts to explain the resistivity of a conductor in terms of the scattering of electrons (the carriers of electricity) by the relatively immobile ions in the metal that act like obstructions to the flow of electrons. The model, which is an application of kinetic theory, assumes that the microscopic behaviour of electrons in a solid may be treated classically and behaves much like a pinball machine, with a sea of constantly jittering e ...
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Metals
A metal (from Greek μέταλλον ''métallon'', "mine, quarry, metal") is a material that, when freshly prepared, polished, or fractured, shows a lustrous appearance, and conducts electricity and heat relatively well. Metals are typically ductile (can be drawn into wires) and malleable (they can be hammered into thin sheets). These properties are the result of the ''metallic bond'' between the atoms or molecules of the metal. A metal may be a chemical element such as iron; an alloy such as stainless steel; or a molecular compound such as polymeric sulfur nitride. In physics, a metal is generally regarded as any substance capable of conducting electricity at a temperature of absolute zero. Many elements and compounds that are not normally classified as metals become metallic under high pressures. For example, the nonmetal iodine gradually becomes a metal at a pressure of between 40 and 170 thousand times atmospheric pressure. Equally, some materials regarded as metals c ...
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Extrinsic Semiconductor
An extrinsic semiconductor is one that has been '' doped''; during manufacture of the semiconductor crystal a trace element or chemical called a doping agent has been incorporated chemically into the crystal, for the purpose of giving it different electrical properties than the pure semiconductor crystal, which is called an ''intrinsic semiconductor''. In an extrinsic semiconductor it is these foreign dopant atoms in the crystal lattice that mainly provide the charge carriers which carry electric current through the crystal. The doping agents used are of two types, resulting in two types of extrinsic semiconductor. An ''electron donor'' dopant is an atom which, when incorporated in the crystal, releases a mobile conduction electron into the crystal lattice. An extrinsic semiconductor which has been doped with electron donor atoms is called an n-type semiconductor, because the majority of charge carriers in the crystal are negative electrons. An '' electron acceptor'' dopant is ...
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Gallium Arsenide
Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a Zincblende (crystal structure), zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. Preparation and chemistry In the compound, gallium has a +3 oxidation state. Gallium arsenide single crystals can be prepared by three industrial processes: * The vertical gradient freeze (VGF) process. * Crystal growth using a horizontal zone furnace in the Bridgman-Stockbarger technique, in which gallium and arsenic vapors react, and free molecules deposit on a seed crystal at the cooler end of the furnace. * Liquid encapsulated Czochralski process, Czoch ...
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Germanium
Germanium is a chemical element with the symbol Ge and atomic number 32. It is lustrous, hard-brittle, grayish-white and similar in appearance to silicon. It is a metalloid in the carbon group that is chemically similar to its group neighbors silicon and tin. Like silicon, germanium naturally reacts and forms complexes with oxygen in nature. Because it seldom appears in high concentration, germanium was discovered comparatively late in the discovery of the elements. Germanium ranks near fiftieth in relative abundance of the elements in the Earth's crust. In 1869, Dmitri Mendeleev predicted its existence and some of its properties from its position on his periodic table, and called the element ekasilicon. In 1886, Clemens Winkler at Freiberg University found the new element, along with silver and sulfur, in the mineral argyrodite. Winkler named the element after his country, Germany. Germanium is mined primarily from sphalerite (the primary ore of zinc), though germanium is ...
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Silicon
Silicon is a chemical element with the symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic luster, and is a tetravalent metalloid and semiconductor. It is a member of group 14 in the periodic table: carbon is above it; and germanium, tin, lead, and flerovium are below it. It is relatively unreactive. Because of its high chemical affinity for oxygen, it was not until 1823 that Jöns Jakob Berzelius was first able to prepare it and characterize it in pure form. Its oxides form a family of anions known as silicates. Its melting and boiling points of 1414 °C and 3265 °C, respectively, are the second highest among all the metalloids and nonmetals, being surpassed only by boron. Silicon is the eighth most common element in the universe by mass, but very rarely occurs as the pure element in the Earth's crust. It is widely distributed in space in cosmic dusts, planetoids, and planets as various forms of silicon dioxide ( ...
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