Nanowire
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Nanowire
A nanowire is a nanostructure in the form of a wire with the diameter of the order of a nanometre (10−9 metres). More generally, nanowires can be defined as structures that have a thickness or diameter constrained to tens of nanometers or less and an unconstrained length. At these scales, quantum mechanical effects are important—which coined the term "quantum wires". Many different types of nanowires exist, including superconducting (e.g. Yttrium barium copper oxide, YBCO), metallic (e.g. nickel, Ni, platinum, Pt, gold, Au, Ag), semiconducting (e.g. Silicon nanowire, silicon nanowires (SiNWs), indium phosphide, InP, gallium nitride, GaN) and insulating (e.g. Silicon dioxide, SiO2, Titanium dioxide, TiO2). Molecular nanowires are composed of repeating molecular units either organic (e.g. DNA) or inorganic (e.g. Mo6S9−xIx). Characteristics file:SnSe@SWCNT.jpg, upright=1.2, Crystalline 2×2-atom tin selenide nanowire grown inside a single-wall carbon nanotube (tube diamete ...
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Silicon Nanowire
Silicon nanowires, also referred to as SiNWs, are a type of semiconductor nanowire most often formed from a silicon precursor by etching of a solid or through catalyzed growth from a vapor or liquid phase. Such nanowires have promising applications in lithium ion batteries, thermoelectrics and sensors. Initial synthesis of SiNWs is often accompanied by thermal oxidation steps to yield structures of accurately tailored size and morphology. SiNWs have unique properties that are not seen in bulk (three-dimensional) silicon materials. These properties arise from an unusual quasi one-dimensional electronic structure and are the subject of research across numerous disciplines and applications. The reason that SiNWs are considered one of the most important one-dimensional materials is they could have a function as building blocks for nanoscale electronics assembled without the need for complex and costly fabrication facilities. SiNWs are frequently studied towards applications including pho ...
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Silicon Nanowire
Silicon nanowires, also referred to as SiNWs, are a type of semiconductor nanowire most often formed from a silicon precursor by etching of a solid or through catalyzed growth from a vapor or liquid phase. Such nanowires have promising applications in lithium ion batteries, thermoelectrics and sensors. Initial synthesis of SiNWs is often accompanied by thermal oxidation steps to yield structures of accurately tailored size and morphology. SiNWs have unique properties that are not seen in bulk (three-dimensional) silicon materials. These properties arise from an unusual quasi one-dimensional electronic structure and are the subject of research across numerous disciplines and applications. The reason that SiNWs are considered one of the most important one-dimensional materials is they could have a function as building blocks for nanoscale electronics assembled without the need for complex and costly fabrication facilities. SiNWs are frequently studied towards applications including pho ...
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Ion Track Technology (track Replication)
Ion tracks are damage-trails created by swift heavy ions penetrating through solids, which may be sufficiently-contiguous for chemical etching in a variety of crystalline, glassy, and/or polymeric solids. They are associated with cylindrical damage-regions several nanometers in diameter and can be studied by Rutherford backscattering spectrometry (RBS), transmission electron microscopy (TEM), small-angle neutron scattering (SANS), small-angle X-ray scattering (SAXS) or gas permeation. Ion track technology Ion track technology deals with the production and application of ion tracks in microtechnology and nanotechnology. Ion tracks can be selectively etched in many insulating solids, leading to cones or cylinders, down to 8 nanometers in diameter. Etched track cylinders can be used as filters, Coulter counter microchannels, be modified with monolayers, or be filled by electroplating. Ion track technology has been developed to fill certain niche areas where conventional nano ...
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Molecular Nanowires
Molecular wires (or sometimes called molecular nanowires) are molecular chains that conduct electric current. They are the proposed building blocks for molecular electronic devices. Their typical diameters are less than three nanometers, while their lengths may be macroscopic, extending to centimeters or more. Examples Most types of molecular wires are derived from organic molecules. One naturally occurring molecular wire is DNA. Prominent inorganic examples include polymeric materials such as Li2Mo6Se6 and Mo6S9−xIx, d4(CO)4(OAc)4Pd(acac)2 and single-molecule extended metal atom chains (EMACs) which comprise strings of transition metal atoms directly bonded to each other. Molecular wires containing paramagnetic inorganic moieties can exhibit Kondo peaks. Conduction of electrons Molecular wires conduct electricity. They typically have non-linear current-voltage characteristics, and do not behave as simple ohmic conductors. The conductance follows typical power law behavio ...
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Quantum Wire
In mesoscopic physics, a quantum wire is an electrically conducting wire in which quantum effects influence the transport properties. Usually such effects appear in the dimension of nanometers, so they are also referred to as nanowires. Quantum effects If the diameter of a wire is sufficiently small, electrons will experience quantum confinement in the transverse direction. As a result, their transverse energy will be limited to a series of discrete values. One consequence of this quantization is that the classical formula for calculating the electrical resistance of a wire, : R = \rho \frac, is not valid for quantum wires (where \rho is the material's resistivity, l is the length, and A is the cross-sectional area of the wire). Instead, an exact calculation of the transverse energies of the confined electrons has to be performed to calculate a wire's resistance. Following from the quantization of electron energy, the electrical conductance (the inverse of the resistance) is fou ...
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Thermal Oxidation
In microfabrication, thermal oxidation is a way to produce a thin layer of oxide (usually silicon dioxide) on the surface of a wafer. The technique forces an oxidizing agent to diffuse into the wafer at high temperature and react with it. The rate of oxide growth is often predicted by the Deal–Grove model. Thermal oxidation may be applied to different materials, but most commonly involves the oxidation of silicon substrates to produce silicon dioxide. The chemical reaction Thermal oxidation of silicon is usually performed at a temperature between 800 and 1200 °C, resulting in so called High Temperature Oxide layer (HTO). It may use either water vapor (usually UHP steam) or molecular oxygen as the oxidant; it is consequently called either ''wet'' or ''dry'' oxidation. The reaction is one of the following: :\rm Si + 2H_2O \rightarrow SiO_2 + 2H_ :\rm Si + O_2 \rightarrow SiO_2 \, The oxidizing ambient may also contain several percent of hydrochloric acid (HCl). The chlori ...
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Gold
Gold is a chemical element with the symbol Au (from la, aurum) and atomic number 79. This makes it one of the higher atomic number elements that occur naturally. It is a bright, slightly orange-yellow, dense, soft, malleable, and ductile metal in a pure form. Chemically, gold is a transition metal and a group 11 element. It is one of the least reactive chemical elements and is solid under standard conditions. Gold often occurs in free elemental ( native state), as nuggets or grains, in rocks, veins, and alluvial deposits. It occurs in a solid solution series with the native element silver (as electrum), naturally alloyed with other metals like copper and palladium, and mineral inclusions such as within pyrite. Less commonly, it occurs in minerals as gold compounds, often with tellurium (gold tellurides). Gold is resistant to most acids, though it does dissolve in aqua regia (a mixture of nitric acid and hydrochloric acid), forming a soluble tetrachloroaurate anion. Gold is ...
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Gallium Nitride
Gallium nitride () is a binary III/ V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without requiring nonlinear optical frequency-doubling. Its sensitivity to ionizing radiation is low (like other group III nitrides), making it a suitable material for solar cell arrays for satellites. Military and space applications could also benefit as devices have shown stability in high radiation environments. Because GaN transistors can operate at much higher temperatures and work at much higher voltages than gallium arsenide (GaAs) transistors, they make ideal power amplifiers at microwave frequencies. In addition, GaN offers promising characteris ...
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Titanium Dioxide
Titanium dioxide, also known as titanium(IV) oxide or titania , is the inorganic compound with the chemical formula . When used as a pigment, it is called titanium white, Pigment White 6 (PW6), or CI 77891. It is a white solid that is insoluble to water, although mineral forms can appear black. As a pigment, it has a wide range of applications, including paint, sunscreen, and food coloring. When used as a food coloring, it has E number E171. World production in 2014 exceeded 9 million tonnes. It has been estimated that titanium dioxide is used in two-thirds of all pigments, and pigments based on the oxide have been valued at a price of $13.2 billion. Structure In all three of its main dioxides, titanium exhibits octahedral geometry, being bonded to six oxide anions. The oxides in turn are bonded to three Ti centers. The overall crystal structure of rutile is tetragonal in symmetry whereas anatase and brookite are orthorhombic. The oxygen substructures are all slight distort ...
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Klaus Von Klitzing
Klaus von Klitzing (, born 28 June 1943, Schroda) is a German physicist, known for discovery of the integer quantum Hall effect, for which he was awarded the 1985 Nobel Prize in Physics. Education In 1962, Klitzing passed the Abitur at the Artland-Gymnasium in Quakenbrück, Germany, before studying physics at the Braunschweig University of Technology, where he received his diploma in 1969. He continued his studies at the University of Würzburg at the chair of Gottfried Landwehr, completing his PhD thesis entitled ''Galvanomagnetic Properties of Tellurium in Strong Magnetic Fields'' in 1972, and gaining habilitation in 1978. Research and career During his career Klitzing has worked at the Clarendon Laboratory at the University of Oxford and the Grenoble High Magnetic Field Laboratory in France (now LNCMI), where he continued to work until becoming a professor at the Technical University of Munich in 1980. He has been a director of the Max Planck Institute for Solid State Rese ...
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Quantum Hall Effect
The quantum Hall effect (or integer quantum Hall effect) is a quantized version of the Hall effect which is observed in two-dimensional electron systems subjected to low temperatures and strong magnetic fields, in which the Hall resistance exhibits steps that take on the quantized values : R_ = \frac = \frac , where is the Hall voltage, is the channel current, is the elementary charge and is Planck's constant. The divisor can take on either integer () or fractional () values. Here, is roughly but not exactly equal to the filling factor of Landau levels. The quantum Hall effect is referred to as the integer or fractional quantum Hall effect depending on whether is an integer or fraction, respectively. The striking feature of the integer quantum Hall effect is the persistence of the quantization (i.e. the Hall plateau) as the electron density is varied. Since the electron density remains constant when the Fermi level is in a clean spectral gap, this situation corresp ...
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Epitaxial Nanowire Heterostructures SEM Image
Epitaxy refers to a type of crystal growth or material deposition in which new crystalline layers are formed with one or more well-defined orientations with respect to the crystalline seed layer. The deposited crystalline film is called an epitaxial film or epitaxial layer. The relative orientation(s) of the epitaxial layer to the seed layer is defined in terms of the orientation of the crystal lattice of each material. For most epitaxial growths, the new layer is usually crystalline and each crystallographic domain of the overlayer must have a well-defined orientation relative to the substrate crystal structure. Epitaxy can involve single-crystal structures, although grain-to-grain epitaxy has been observed in granular films. For most technological applications, single domain epitaxy, which is the growth of an overlayer crystal with one well-defined orientation with respect to the substrate crystal, is preferred. Epitaxy can also play an important role while growing superlatti ...
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