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Capacitance–voltage Profiling
Capacitance–voltage profiling (or C–V profiling, sometimes CV profiling) is a technique for characterizing semiconductor materials and devices. The applied voltage is varied, and the capacitance is measured and plotted as a function of voltage. The technique uses a metal–semiconductor junction (Schottky barrier) or a p–n junctionJ. Hilibrand and R.D. Gold, "Determination of the Impurity Distribution in Junction Diodes From Capacitance-Voltage Measurements", RCA Review, vol. 21, p. 245, June 1960 or a MOSFET to create a depletion region, a region which is empty of conducting electrons and holes, but may contain ionized donors and electrically active defects or ''traps''. The depletion region with its ionized charges inside behaves like a capacitor. By varying the voltage applied to the junction it is possible to vary the depletion width. The dependence of the depletion width upon the applied voltage provides information on the semiconductor's internal characteristics, such ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Semiconductor Material
A semiconductor is a material which has an electrical conductivity value falling between that of a conductor, such as copper, and an insulator, such as glass. Its resistivity falls as its temperature rises; metals behave in the opposite way. Its conducting properties may be altered in useful ways by introducing impurities (" doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created. The behavior of charge carriers, which include electrons, ions, and electron holes, at these junctions is the basis of diodes, transistors, and most modern electronics. Some examples of semiconductors are silicon, germanium, gallium arsenide, and elements near the so-called "metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second-most common semiconductor and is used in laser diodes, solar cells, microwave-frequency integrated circuits, and others. Silicon is a critical element for f ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
NanoHUB
nanoHUB.org is a science and engineering gateway comprising community-contributed resources and geared toward education, professional networking, and interactive simulation tools for nanotechnology. Funded by the United States National Science Foundation (NSF), it is a product of the Network for Computational Nanotechnology (NCN). NCN supports research efforts in nanoelectronics; nanomaterials; nanoelectromechanical systems (NEMS); nanofluidics; nanomedicine, nanobiology; and nanophotonics. History The Network for Computational Nanotechnology was established in 2002 to create a resource for nanoscience and nanotechnology via online services for research, education, and professional collaboration. Initially a multi-university initiative of eight member institutions including Purdue University, the University of California at Berkeley, the University of Illinois at Urbana-Champaign, Massachusetts Institute of Technology, the Molecular Foundry at Lawrence Berkeley National Laborator ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Deep-level Transient Spectroscopy
Deep-level transient spectroscopy (DLTS) is an experimental tool for studying electrically active defects (known as charge carrier traps) in semiconductors. DLTS establishes fundamental defect parameters and measures their concentration in the material. Some of the parameters are considered as defect "finger prints" used for their identifications and analysis. DLTS investigates defects present in a space charge ( depletion) region of a simple electronic device. The most commonly used are Schottky diodes or p-n junctions. In the measurement process the steady-state diode reverse polarization voltage is disturbed by a voltage pulse. This voltage pulse reduces the electric field in the space charge region and allows free carriers from the semiconductor bulk to penetrate this region and recharge the defects causing their non-equilibrium charge state. After the pulse, when the voltage returns to its steady-state value, the defects start to emit trapped carriers due to the thermal emiss ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Drive Level Capacitance Profiling
Drive-level capacitance profiling (DLCP) is a type of capacitance–voltage-profiling characterization technique developed specifically for amorphous and polycrystalline materials, which have more anomalies such as deep levels, interface states, or non-uniformities. Whereas in standard C–V profiles the charge response is assumed to be linear (dQ = CdV), in DLCP profiles the charge response is expected to have significant non-linear behavior (dQ = C0dV + C1(dV)2 + C2(dV)3) due to the significant larger AC-signal amplitude used in the DLCP technique. DLCP can yield, like admittance spectroscopy Spectroscopy is the field of study that measures and interprets the electromagnetic spectra that result from the interaction between electromagnetic radiation and matter as a function of the wavelength or frequency of the radiation. Matter wa ..., both the spatial and the energetic distribution of defects. The energetic distribution is obtained by varying the frequency of the A ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Depletion Width
In semiconductor physics, the depletion region, also called depletion layer, depletion zone, junction region, space charge region or space charge layer, is an insulating region within a conductive, doped semiconductor material where the mobile charge carriers have been diffused away, or have been forced away by an electric field. The only elements left in the depletion region are ionized donor or acceptor impurities. This region of uncovered positive and negative ions is called the depletion region due to the depletion of carriers in this region. The depletion region is so named because it is formed from a conducting region by removal of all free charge carriers, leaving none to carry a current. Understanding the depletion region is key to explaining modern semiconductor electronics: diodes, bipolar junction transistors, field-effect transistors, and variable capacitance diodes all rely on depletion region phenomena. Formation in a p–n junction A depletion region ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Depletion Region
In semiconductor physics, the depletion region, also called depletion layer, depletion zone, junction region, space charge region or space charge layer, is an insulating region within a conductive, doped semiconductor material where the mobile charge carriers have been diffused away, or have been forced away by an electric field. The only elements left in the depletion region are ionized donor or acceptor impurities. This region of uncovered positive and negative ions is called the depletion region due to the depletion of carriers in this region. The depletion region is so named because it is formed from a conducting region by removal of all free charge carriers, leaving none to carry a current. Understanding the depletion region is key to explaining modern semiconductor electronics: diodes, bipolar junction transistors, field-effect transistors, and variable capacitance diodes all rely on depletion region phenomena. Formation in a p–n junction A depletion region for ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Current–voltage Characteristic
A current–voltage characteristic or I–V curve (current–voltage curve) is a relationship, typically represented as a chart or graph, between the electric current through a circuit, device, or material, and the corresponding voltage, or potential difference across it. In electronics In electronics, the relationship between the direct current ( DC) through an electronic device and the DC voltage across its terminals is called a current–voltage characteristic of the device. Electronic engineers use these charts to determine basic parameters of a device and to model its behavior in an electrical circuit. These characteristics are also known as I–V curves, referring to the standard symbols for current and voltage. In electronic components with more than two terminals, such as vacuum tubes and transistors, the current-voltage relationship at one pair of terminals may depend on the current or voltage on a third terminal. This is usually displayed on a more complex curr ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Fermi Level
The Fermi level of a solid-state body is the thermodynamic work required to add one electron to the body. It is a thermodynamic quantity usually denoted by ''µ'' or ''E''F for brevity. The Fermi level does not include the work required to remove the electron from wherever it came from. A precise understanding of the Fermi level—how it relates to electronic band structure in determining electronic properties, how it relates to the voltage and flow of charge in an electronic circuit—is essential to an understanding of solid-state physics. In band structure theory, used in solid state physics to analyze the energy levels in a solid, the Fermi level can be considered to be a hypothetical energy level of an electron, such that at thermodynamic equilibrium this energy level would have a ''50% probability of being occupied at any given time''. The position of the Fermi level in relation to the band energy levels is a crucial factor in determining electrical properties. The Fermi le ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Valence Band
In solid-state physics, the valence band and conduction band are the bands closest to the Fermi level, and thus determine the electrical conductivity of the solid. In nonmetals, the valence band is the highest range of electron energies in which electrons are normally present at absolute zero temperature, while the conduction band is the lowest range of vacant electronic states. On a graph of the electronic band structure of a material, the valence band is located below the Fermi level, while the conduction band is located above it. The distinction between the valence and conduction bands is meaningless in metals, because conduction occurs in one or more partially filled bands that take on the properties of both the valence and conduction bands. Band gap In semiconductors and insulators the two bands are separated by a band gap, while in semimetals the bands overlap. A band gap is an energy range in a solid where no electron states can exist due to the quantization of ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Channel (semiconductor)
The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: ''source'', ''gate'', and ''drain''. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use either electrons (n-channel) or holes (p-channel) as charge carriers in their operation, but not both. Many different types of field effect transistors exist. Field effect transistors generally display very high input impedance at low frequencies. The most widely used field-effect transistor is the MOSFET (metal-oxide-semiconductor field-effect transistor). History The concept of a field-effect transistor (FET) was first patented by Austro-Hungarian physicist Julius Edgar Lilienfeld in 1925 a ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Potential Barrier
In quantum mechanics, the rectangular (or, at times, square) potential barrier is a standard one-dimensional problem that demonstrates the phenomena of wave-mechanical tunneling (also called "quantum tunneling") and wave-mechanical reflection. The problem consists of solving the one-dimensional time-independent Schrödinger equation for a particle encountering a rectangular potential energy barrier. It is usually assumed, as here, that a free particle impinges on the barrier from the left. Although classically a particle behaving as a point mass would be reflected if its energy is less than a particle actually behaving as a matter wave has a non-zero probability of penetrating the barrier and continuing its travel as a wave on the other side. In classical wave-physics, this effect is known as evanescent wave coupling. The likelihood that the particle will pass through the barrier is given by the transmission coefficient, whereas the likelihood that it is reflected is given by ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Illustration Of C-V Measurement
An illustration is a decoration, interpretation or visual explanation of a text, concept or process, designed for integration in print and digital published media, such as posters, flyers, magazines, books, teaching materials, animations, video games and films. An illustration is typically created by an illustrator. Digital illustrations are often used to make websites and apps more user-friendly, such as the use of emojis to accompany digital type. llustration also means providing an example; either in writing or in picture form. The origin of the word "illustration" is late Middle English (in the sense ‘illumination; spiritual or intellectual enlightenment’): via Old French from Latin ''illustratio''(n-), from the verb ''illustrare''. Illustration styles Contemporary illustration uses a wide range of styles and techniques, including drawing, painting, printmaking, collage, montage, digital design, multimedia, 3D modelling. Depending on the purpose, illustra ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
