14 Nm
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14 Nm
The 14 nm process refers to the MOSFET technology node that is the successor to the 22nm (or 20nm) node. The 14nm was so named by the International Technology Roadmap for Semiconductors (ITRS). Until about 2011, the node following 22nm was expected to be 16nm. All 14nm nodes use FinFET (fin field-effect transistor) technology, a type of multi-gate MOSFET technology that is a non-planar evolution of planar silicon CMOS technology. Samsung Electronics taped out a 14 nm chip in 2014, before manufacturing 10 nm class NAND flash chips in 2013. The same year, SK Hynix began mass-production of 16nm NAND flash, and TSMC began 16nm FinFET production. The following year, Intel began shipping 14nm scale devices to consumers. History Background The basis for sub-20nm fabrication is the FinFET (Fin field-effect transistor), an evolution of the MOSFET transistor. FinFET technology was pioneered by Digh Hisamoto and his team of researchers at Hitachi Central Research Laboratory in 198 ...
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Technology Node
Semiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuit (IC) chips such as modern computer processors, microcontrollers, and memory chips such as NAND flash and DRAM that are present in everyday electrical and electronic devices. It is a multiple-step sequence of photolithographic and chemical processing steps (such as surface passivation, thermal oxidation, planar diffusion and junction isolation) during which electronic circuits are gradually created on a wafer made of pure semiconducting material. Silicon is almost always used, but various compound semiconductors are used for specialized applications. The entire manufacturing process takes time, from start to packaged chips ready for shipment, at least six to eight weeks (tape-out only, not including the circuit design) and is performed in highly specialized semiconductor fabrication plants, also called foundries or fabs. All fabrication takes place inside a c ...
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